DocumentCode
1096781
Title
Control of threshold voltage of AlGaAs/GaAs 2DEG FET´s through heat treatment
Author
Takanashi, Y. ; Hirano, M. ; Sugeta, T.
Author_Institution
N.T.T., Kanagawa, Japan
Volume
5
Issue
7
fYear
1984
fDate
7/1/1984 12:00:00 AM
Firstpage
241
Lastpage
243
Abstract
Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate 2DEG AlGaAs/GaAs FET´s through only heat treatment are investigated. Ni/Ti/Au gate FET´s vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300°C. The same experiment is made for Ti/Au gate FET´s, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.
Keywords
Electron mobility; FETs; Gallium arsenide; Gold; Heat treatment; Molecular beam epitaxial growth; Temperature control; Thickness control; Threshold voltage; Voltage control;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1984.25903
Filename
1484279
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