Annealing Effects of Ti/Au Contact on n-MgZnO/p-Si Ultraviolet-B Photodetectors

Author

Yaonan Hou ; Zengxia Mei ; Huili Liang ; Daqian Ye ; Changzhi Gu ; Xiaolong Du ; Yicheng Lu

Author_Institution

Beijing Nat. Lab. for Condensed Matter Phys., Inst. of Phys., Beijing, China

Volume

60

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

3474

Lastpage

3477

Abstract

Effects of postannealing on Ti/Au-MgZnO contact and n-MgZnO/p-Si heterojunction ultraviolet-B photodetector´s performance are investigated. It is found that the out diffusion of oxygen from MgZnO and its bonding with Ti at the interface have significant influences on the properties of Ti/MgZnO interface and photodetector. The persistent photocurrent observed in the annealed device is attributed to the oxygen vacancies near the interface, consistent with the theoretical calculations. It is revealed that the reaction at metal/MgZnO interface possibly plays a key role and even dominates the MgZnO p-n heterojunction ultraviolet detectors´ performances.

Keywords

II-VI semiconductors; annealing; diffusion; elemental semiconductors; gold; magnesium compounds; photoconductivity; photodetectors; semiconductor heterojunctions; semiconductor-metal boundaries; silicon; titanium; ultraviolet detectors; vacancies (crystal); wide band gap semiconductors; zinc compounds; Ti-Au-MgZnO-Si; Ti/Au-MgZnO contact; bonding; metal/MgZnO interface; n-MgZnO/p-Si heterojunction ultraviolet-B photodetector; oxygen diffusion; oxygen vacancies; photocurrent; postannealing effects; Annealing; Detectors; Electrodes; Gold; Photoconductivity; Photodetectors; Zinc oxide; MgZnO; metal–semiconductor contact; persistent photocurrent (PPC); ultraviolet photodetector;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2278894

Filename

6588906