Demonstration of 184 and 255-GHz Amplifiers Using InP HBT Technology

Author

Radisic, Vesna ; Sawdai, Donald ; Scott, Dennis ; Deal, William R. ; Dang, Linh ; Li, Danny ; Cavus, Abdullah ; Fung, Andy ; Samoska, Lorene ; To, Richard ; Gaier, Todd ; Lai, Richard

Author_Institution

Northrop Grumman Corp., Redondo Beach, CA, USA

Volume

18

Issue

4

fYear

2008

fDate

4/1/2008 12:00:00 AM

Firstpage

281

Lastpage

283

Abstract

In this letter, 184 and 255 GHz single-stage heterojunction bipolar transistor (HBT) amplifiers are reported. Each amplifier uses a single-emitter 0.4 ??m 15 ??m InP HBT device with maximum frequency of oscillation (f_max) greater than 500 GHz and of 200 GHz. The 183 GHz single-stage amplifier has demonstrated gain of 4.3 ?? 0.4 dB for all sites on the wafer. The 255 GHz amplifier has measured gain of 3.5d B and demonstrates the highest frequency measured HBT amplifier gain reported to date. Both amplifiers show excellent agreement with original simulation.

Keywords

amplification; amplifiers; heterojunction bipolar transistors; indium compounds; wafer-scale integration; InP HBT technology; amplifier gain; frequency 183 GHz; frequency 184 GHz; frequency 255 GHz; gain 3.5 dB; single-stage heterojunction bipolar transistor amplifiers; wafer; Amplifier; MM-Wave; heterojunction bipolar transistor (HBT); monolithic microwave integrated circuit (MMIC); sub-millimeter wave;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2008.918952

Filename

4469938