Reply to "Comments on \´structure-enhanced MOSFET degradation due to hot-electron injection\´"

The equal-substrate-current stressing condition used to compare hot-electron-induced MOSFET degradation in different device structures is discussed. The error introduced by using this stressing condition is quantitatively assessed and shown to be too small to affect the interpretation of the experimental data. The post-stress transconductance degradation characterisitics in LDD MOSFET´s are also discussed.