DocumentCode :
1096928
Title :
A 38% Tuning Bandwidth Low Phase Noise Differential Voltage Controlled Oscillator Using a 0.5 
m E/D-PHEMT Process
Author :
Chang, Hong-Yeh ; Wu, Yi-Shuo ; Wang, Yu-Chi
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
Volume :
19
Issue :
7
fYear :
2009
fDate :
7/1/2009 12:00:00 AM
Firstpage :
467
Lastpage :
469
Abstract :
This paper presents a 38% tuning bandwidth low phase noise differential voltage controlled oscillator (VCO) using a 0.5 mum enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed VCO is based on a differential topology with two common-gate transistors. To achieve a wide tuning range with low phase noise, varactor in the VCO core employs the E-mode PHEMT device. The frequency of the VCO is from 18.8 to 27.5 GHz with a tuning bandwidth of 38% and an output power of higher than 5 dBm. The VCO demonstrates a phase noise of -109 dBc/Hz at 1 MHz offset frequency. This circuit can be compared with the VCOs fabricated using the advanced InP HBT technologies.
Keywords :
high electron mobility transistors; phase noise; varactors; voltage-controlled oscillators; E-D-PHEMT process; InP HBT technologies; VCO; common-gate transistor; differential topology; differential voltage controlled oscillator; enhancement-depletion-pseudomorphic high-electron mobility transistor; frequency 1 MHz; frequency 18.8 GHz to 27.5 GHz; low phase noise; offset frequency; tuning bandwidth; varactor; Enhancement/depletion-pseudomorphic high- electron mobility transistor (E/D-PHEMT); low phase noise; voltage controlled oscillator (VCO);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2009.2022136
Filename :
5109481
Link To Document :
