Title :
Annealing of shallow (Rp∼ 20-nm) boron-implanted layers in silicon using electron beams
Author :
McMillan, G.B. ; Shannon, J.M. ; Ahmed, Hameeza ; Ahmed, H.
Author_Institution :
INMOS Ltd., Newport Gwent, U.K.
fDate :
7/1/1984 12:00:00 AM
Abstract :
The annealing of B layers, derived from 20-keV BF2+ implants, in
Keywords :
Annealing; Boron; Conductivity; Electron beams; Fabrication; Furnaces; Implants; Silicon; Solids; Temperature distribution;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25917
