• DocumentCode
    1096932
  • Title

    Annealing of shallow (Rp∼ 20-nm) boron-implanted layers in silicon using electron beams

  • Author

    McMillan, G.B. ; Shannon, J.M. ; Ahmed, Hameeza ; Ahmed, H.

  • Author_Institution
    INMOS Ltd., Newport Gwent, U.K.
  • Volume
    5
  • Issue
    7
  • fYear
    1984
  • fDate
    7/1/1984 12:00:00 AM
  • Firstpage
    280
  • Lastpage
    282
  • Abstract
    The annealing of B layers, derived from 20-keV BF2+ implants, in
  • Keywords
    Annealing; Boron; Conductivity; Electron beams; Fabrication; Furnaces; Implants; Silicon; Solids; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25917
  • Filename
    1484293
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1096932