Title :
Development of hydrogenated amorphous silicon sensors for diagnostic X-ray imaging
Author :
Antonuk, L.E. ; Kim, C.W. ; Boudry, J. ; Yorkston, J. ; Longo, M.J. ; Street, R.A.
Author_Institution :
Michigan Univ., Ann Arbor, MI, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
Signal measurements with diagnostic-quality X-rays have been performed on photosensitive diodes fabricated from hydrogenated amorphous silicon. Such diodes exhibit high light collection and conversion efficiency and excellent radiation damage resistance and thus are candidates for X-ray imaging. Results of an examination of the linearity of the output signal with respect to X-ray exposure rate and of the signal size normalized to exposure rate are reported for various X-ray energies and phosphor screens. The leakage current was small in magnitude relative to the signal current, and the signal current displayed linearity over a large range of exposure rates. Such photodiodes are being incorporated in two-dimensional arrays of addressable sensors for real-time medical imaging
Keywords :
X-ray applications; biomedical equipment; diagnostic radiography; photodiodes; Si:H; X-ray exposure rate; addressable sensors; conversion efficiency; diagnostic X-ray imaging; hydrogenated amorphous sensors; leakage current; light collection; linearity; output signal; phosphor screens; photosensitive diodes; radiation damage resistance; real-time medical imaging; signal size; two-dimensional arrays; Amorphous silicon; Diodes; Electrical resistance measurement; Immune system; Leakage current; Linearity; Performance evaluation; Phosphors; Sensor arrays; X-ray imaging;
Journal_Title :
Nuclear Science, IEEE Transactions on
