Title :
A self-aligned In0.53Ga0.47As junction field-effect transistor grown by molecular beam epitaxy
Author :
Wake, D. ; Livingstone, A.W. ; Andrews, D.A. ; Davies, G.J.
Author_Institution :
British Telecom Research Laboratories, Suffolk, England
fDate :
7/1/1984 12:00:00 AM
Abstract :
An In0.53Ga0.47As field-effect transistor has been fabricated on MBE-grown material, using a novel self-alignment technique. This device has a dc transconductance of 60 mS/mm for a 3-µm gate length, one of the highest reported figures for such a length, and a very low gate leakage of 100 nA at -3-V gate bias.
Keywords :
Electron mobility; FETs; Gallium arsenide; Gold; Indium phosphide; Molecular beam epitaxial growth; PIN photodiodes; Substrates; Surface contamination; Surface reconstruction;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25919
