Title :
Synthetic nonlinear semiconductors
Author :
Gurnick, M.K. ; DeTemple, T.A.
Author_Institution :
Electro-Physics Laboratory, Department of Electrical Engineering, University of Illinois Industrial Affliates
fDate :
5/1/1983 12:00:00 AM
Abstract :
Second-order optical nonlinearities associated with intra-subband transitions in AlxGa1-xAS heterostructure exhibiting the quantum size effect are considered and shown to be large under conditions of degenerate doping and nonsymmetric compositional grading. Nonlinearities of between 10-100 times larger than in bulk GaAs seem feasible.
Keywords :
Aluminum materials/devices; Gallium materials/devices; Optical propagation in nonlinear media; Semiconductor growth; Atomic measurements; Energy measurement; Frequency measurement; Gallium arsenide; Infrared detectors; Nonlinear optics; Optical harmonic generation; Optical pumping; Semiconductor device doping; Size measurement;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1983.1071927
