• DocumentCode
    1097016
  • Title

    Shallow boron junctions implanted in silicon through a surface oxide

  • Author

    Liu, T.M. ; Oldham, W.G. ; Oldham, W.G.

  • Author_Institution
    Electronic Research Laboratory, Berkeley, CA
  • Volume
    5
  • Issue
    8
  • fYear
    1984
  • fDate
    8/1/1984 12:00:00 AM
  • Firstpage
    299
  • Lastpage
    301
  • Abstract
    The partial-ion-channeling tail in the atomic distribution profile of low-energy boron implants into
  • Keywords
    Amorphous materials; Annealing; Boron; CMOS technology; Implants; Ion beams; Shadow mapping; Silicon; Substrates; Tail;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25924
  • Filename
    1484300
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097016