Title :
An amorphous silicon solar cell having a conversion efficiency of 10.50 percent
Author :
Yamazaki, S. ; Mase, A. ; Urata, K. ; Shibata, K. ; Shinohara, H. ; Nagayama, S. ; Abe, M. ; Hamatani, T. ; Suzuki, K.
Author_Institution :
Semiconductor Energy Laboratory, Inc., Tokyo, Japan
fDate :
8/1/1984 12:00:00 AM
Abstract :
We report on a hydrogenated amorphous silicon (a-Si:H) p-i-n solar cell having a conversion efficiency of 10.50 percent (1.05-cm2area). The cell was prepared by a conventional plasma-enhanced chemical vapor deposition process using a structure back electrode n-i-p/SnO2-ITO/glass. This conversion efficiency was obtained from the reduction and control of impurity levels in the i-layer. Photovoltaic characteristics of prepared cells were measured under AMI (100 mW/cm2). The impurity levels of oxygen and boron were measured by SIMS and are discussed.
Keywords :
Amorphous silicon; Chemical vapor deposition; Electrodes; Glass; Impurities; PIN photodiodes; Photovoltaic cells; Plasma chemistry; Plasma measurements; Plasma properties;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25929
