• DocumentCode
    1097067
  • Title

    An amorphous silicon solar cell having a conversion efficiency of 10.50 percent

  • Author

    Yamazaki, S. ; Mase, A. ; Urata, K. ; Shibata, K. ; Shinohara, H. ; Nagayama, S. ; Abe, M. ; Hamatani, T. ; Suzuki, K.

  • Author_Institution
    Semiconductor Energy Laboratory, Inc., Tokyo, Japan
  • Volume
    5
  • Issue
    8
  • fYear
    1984
  • fDate
    8/1/1984 12:00:00 AM
  • Firstpage
    315
  • Lastpage
    318
  • Abstract
    We report on a hydrogenated amorphous silicon (a-Si:H) p-i-n solar cell having a conversion efficiency of 10.50 percent (1.05-cm2area). The cell was prepared by a conventional plasma-enhanced chemical vapor deposition process using a structure back electrode n-i-p/SnO2-ITO/glass. This conversion efficiency was obtained from the reduction and control of impurity levels in the i-layer. Photovoltaic characteristics of prepared cells were measured under AMI (100 mW/cm2). The impurity levels of oxygen and boron were measured by SIMS and are discussed.
  • Keywords
    Amorphous silicon; Chemical vapor deposition; Electrodes; Glass; Impurities; PIN photodiodes; Photovoltaic cells; Plasma chemistry; Plasma measurements; Plasma properties;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25929
  • Filename
    1484305
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097067