DocumentCode :
1097074
Title :
Microwave Active Inductors
Author :
Zito, Domenico ; Fonte, Alessandro ; Pepe, Domenico
Author_Institution :
Univ. of Pisa, Pisa, Italy
Volume :
19
Issue :
7
fYear :
2009
fDate :
7/1/2009 12:00:00 AM
Firstpage :
461
Lastpage :
463
Abstract :
In this letter, the experimental proofs of two microwave active inductors with very high quality factor, namely Differential Boot-Strapped Inductor (D-BSI) and Cross-Coupled Differential Boot-Strapped Inductor (CCD-BSI), are presented. These circuits can be effectively implemented in modern RF-CMOS processes for high-Q equivalent integrated inductors at high frequency. The cases of study at 13 GHz have been designed and implemented in a modern standard 90 nm bulk CMOS process. The measurements on the test-chips show an equivalent inductance close to 3.2 nH with an associated quality factor up to 400 and a wide linearity range.
Keywords :
CMOS integrated circuits; Q-factor; bootstrap circuits; inductors; integrated circuit measurement; microwave integrated circuits; CCD-BSI; RF-CMOS process; cross-coupled differential boot-strapped inductor; equivalent inductance; frequency 13 GHz; high-Q equivalent integrated inductor; microwave active inductor; modern standard bulk CMOS process; quality factor; size 90 nm; test-chip measurement; Active inductor; RF-CMOS; high quality factor; low-power; microwaves integrated circuits;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2009.2022134
Filename :
5109496
Link To Document :
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