Arguments for electron conduction in silicon nitride

The carrier type conducted in the nitride under + VGhas been interpreted as an electron by some and as a hole by others. Under - VGhole conduction is generally accepted. Our I-V data on the Si3N4dielectric agree with those reported in the literature but we interpret the nitride conduction as electron flow for both + VGand - VG. New arguments to support electron conduction are derived from three types of Si3N4:SiO2dual dielectric silicon-gate transistors.