• DocumentCode
    1097075
  • Title

    Arguments for electron conduction in silicon nitride

  • Author

    Yau, L.D.

  • Author_Institution
    Intel Corporation, Aloha, OR
  • Volume
    5
  • Issue
    8
  • fYear
    1984
  • fDate
    8/1/1984 12:00:00 AM
  • Firstpage
    318
  • Lastpage
    321
  • Abstract
    The carrier type conducted in the nitride under + VGhas been interpreted as an electron by some and as a hole by others. Under - VGhole conduction is generally accepted. Our I-V data on the Si3N4dielectric agree with those reported in the literature but we interpret the nitride conduction as electron flow for both + VGand - VG. New arguments to support electron conduction are derived from three types of Si3N4:SiO2dual dielectric silicon-gate transistors.
  • Keywords
    Charge carrier processes; Current measurement; Dielectrics; Electrodes; Electron emission; Electron traps; Energy states; Silicon; Spontaneous emission; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25930
  • Filename
    1484306
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097075