• DocumentCode
    1097125
  • Title

    Field-enhanced tunneling and barrier lowering in Al—n+GaAs—nGaAs Schottky contacts grown by MBE

  • Author

    Shenai, K. ; Eglash, S.J. ; Dutton, R.W. ; Zurakowski, M.P. ; Spicer, W.E.

  • Author_Institution
    Stanford University, Stanford, CA
  • Volume
    5
  • Issue
    8
  • fYear
    1984
  • fDate
    8/1/1984 12:00:00 AM
  • Firstpage
    329
  • Lastpage
    332
  • Abstract
    A thin, highly Si-doped (n-type) interfacial layer is used for controlled barrier lowering in n-type GaAs. The thickness and the doping density of the interfacial n+ layer in the range of 50-100 Å, are extracted from the measured electrical characteristics of Schottky contacts. A model for field-enhanced tunneling current in metal--nGaAs Schottky structures is presented and the experimental results for Al-n+ GaAs devices fabricated using molecular beam epitaxy (MBE) show good agreement.
  • Keywords
    Density measurement; Doping; Electric variables; Electric variables measurement; Gallium arsenide; Molecular beam epitaxial growth; Schottky barriers; Semiconductor process modeling; Thickness measurement; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25934
  • Filename
    1484310
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097125