Title :
Field-enhanced tunneling and barrier lowering in Al—n+GaAs—nGaAs Schottky contacts grown by MBE
Author :
Shenai, K. ; Eglash, S.J. ; Dutton, R.W. ; Zurakowski, M.P. ; Spicer, W.E.
Author_Institution :
Stanford University, Stanford, CA
fDate :
8/1/1984 12:00:00 AM
Abstract :
A thin, highly Si-doped (n-type) interfacial layer is used for controlled barrier lowering in n-type GaAs. The thickness and the doping density of the interfacial n+ layer in the range of 50-100 Å, are extracted from the measured electrical characteristics of Schottky contacts. A model for field-enhanced tunneling current in metal--nGaAs Schottky structures is presented and the experimental results for Al-n+ GaAs devices fabricated using molecular beam epitaxy (MBE) show good agreement.
Keywords :
Density measurement; Doping; Electric variables; Electric variables measurement; Gallium arsenide; Molecular beam epitaxial growth; Schottky barriers; Semiconductor process modeling; Thickness measurement; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25934
