Title :
Low Operating Voltage and Small Gain Slope of InGaAs APDs With p-Type Multiplication Layer
Author :
Ying-Jie Ma ; Yong-Gang Zhang ; Yi Gu ; Xing-You Chen ; Li Zhou ; Su-Ping Xi ; Hao-Si-Bai-Yin Li
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Abstract :
We reported separate absorption and multiplication InAlAs/InGaAs avalanche photodiodes with a p-type multiplication layer. Wedge-shaped electric field profiles with different gradients and peak intensities confined in a thin InAlAs avalanche layer were realized. These devices showed optimum operating gains up to 40 in linear mode with low operating voltages <;20 V, small gain slopes, and high-gain uniformity. Moreover, a reduced breakdown voltage temperature coefficient <;6 mV/K in the temperature range of 200-350 K was observed, whereas the dark current showed a noticeable increase. Those multiplication performances are attributed to the modified electric field profiles and are ideally suitable for focal plane array imaging applications.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; semiconductor device breakdown; APD; InAlAs-InGaAs; absorption avalanche photodiodes; dark current; focal plane array imaging applications; gain slope; high-gain uniformity; linear mode; low operating voltage; multiplication avalanche photodiodes; p-type multiplication layer; reduced breakdown voltage temperature coefficient; temperature 200 K to 350 K; thin avalanche layer; wedge-shaped electric field profiles; Avalanche photodiodes; Dark current; Doping; Indium gallium arsenide; Temperature distribution; Temperature measurement; Avalanche photodiodes; FPAs; InAlAs/InGaAs; avalanche photodiodes; gain slope; low operating voltage;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2015.2389819
