Title :
Time-of-Flight Measurements on TlBr Detectors
Author :
Suzuki, K. ; Shorohov, M. ; Sawada, T. ; Seto, S.
Author_Institution :
Hokkaido Univ. of Sci. (exHokkaido Inst. of Technol.), Sapporo, Japan
Abstract :
Carrier transport properties of TlBr crystals grown using the Bridgman method were investigated by the time-of-flight technique. The electron and hole mobilities were measured as 20 - 27 cm2 /Vs and 1.0 - 2.0 cm2/Vs respectively at room temperature. The temperature dependence of the electron mobility increases with decreasing temperature as approximated by a well-known empirical formula reflecting the reciprocal of the LO-phonon density.
Keywords :
carrier mobility; crystal growth from melt; electron-phonon interactions; semiconductor counters; thallium compounds; time of flight spectroscopy; Bridgman method; LO-phonon density; TlBr crystals; TlBr detectors; carrier transport properties; electron mobility temperature dependence; hole mobility; tme of flight measurements; Charge carrier processes; Crystals; Current measurement; Detectors; Temperature dependence; Temperature measurement; Voltage measurement; Gamma-ray detector; TlBr; mobility; time-of-flight;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2403279
