Title :
Effects of channel geometries on FET output conductance in saturation
Author_Institution :
IBM, Thomas J. Watson Research Center, Yorktown Heights, NY
fDate :
9/1/1984 12:00:00 AM
Abstract :
This work presents an experimental and theoretical study of the effects of nonrectangular channel geometries on FET electrical characteristics. In particular it is shown that substantial variations of the channel width in vicinity of the drain have significant consequences on the output conductance in saturation. It is, consequently, suggested that the channel geometry can be considered as a further relevant design parameter, to be used in controlling excessive output conductance.
Keywords :
Analytical models; Electric variables; FETs; Geometry; Hall effect; Magnetic analysis; Nonvolatile memory; Numerical simulation; Shape; Silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25944