• DocumentCode
    1097311
  • Title

    InGaAsP/InP separated multiclad layer stripe geometry laser emitting at 1.5 µm wavelength

  • Author

    Imai, Hajime ; Ishikawa, Hiroshi ; Tanahashi, Toshiwki ; Hori, Ken-ichi

  • Author_Institution
    Fijitsu Lab., Ltd., Atsugi, Japan
  • Volume
    19
  • Issue
    6
  • fYear
    1983
  • fDate
    6/1/1983 12:00:00 AM
  • Firstpage
    1063
  • Lastpage
    1067
  • Abstract
    We have developed an InGaAsP/InP separated multiclad layer (SML) stripe geometry laser emitting at 1.5 μm wavelength. In this laser, the optical confinement is done by the effective refractive index step owing to the formation of the coupled waveguide outside the stripe region. The current confinement is done by the p-n-p-n structure outside the stripe region. The CW threshold current at 25 °C is only 82 mA for the stripe width and the cavity length of 6 μm and 250 μm, respectively. The maximum temperature where the CW lasing is obtained is 65°C. The characteristic temperature of the threshold current is 60 K. The transverse mode is fundamental up to 1.8 times the threshold. Ten samples are operated at 50°C with constant optical output of 5 mW/facet. These samples are still operating at over 10 000 h with a slight increase in the driving current. The appreciable change in the characteristics due to aging is not observed.
  • Keywords
    CW lasers; Gallium materials/lasers; Indium materials/devices; Geometrical optics; Indium phosphide; Optical refraction; Optical variables control; Optical waveguides; Refractive index; Stimulated emission; Temperature; Threshold current; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1983.1071959
  • Filename
    1071959