DocumentCode
1097311
Title
InGaAsP/InP separated multiclad layer stripe geometry laser emitting at 1.5 µm wavelength
Author
Imai, Hajime ; Ishikawa, Hiroshi ; Tanahashi, Toshiwki ; Hori, Ken-ichi
Author_Institution
Fijitsu Lab., Ltd., Atsugi, Japan
Volume
19
Issue
6
fYear
1983
fDate
6/1/1983 12:00:00 AM
Firstpage
1063
Lastpage
1067
Abstract
We have developed an InGaAsP/InP separated multiclad layer (SML) stripe geometry laser emitting at 1.5 μm wavelength. In this laser, the optical confinement is done by the effective refractive index step owing to the formation of the coupled waveguide outside the stripe region. The current confinement is done by the p-n-p-n structure outside the stripe region. The CW threshold current at 25 °C is only 82 mA for the stripe width and the cavity length of 6 μm and 250 μm, respectively. The maximum temperature where the CW lasing is obtained is 65°C. The characteristic temperature of the threshold current is 60 K. The transverse mode is fundamental up to 1.8 times the threshold. Ten samples are operated at 50°C with constant optical output of 5 mW/facet. These samples are still operating at over 10 000 h with a slight increase in the driving current. The appreciable change in the characteristics due to aging is not observed.
Keywords
CW lasers; Gallium materials/lasers; Indium materials/devices; Geometrical optics; Indium phosphide; Optical refraction; Optical variables control; Optical waveguides; Refractive index; Stimulated emission; Temperature; Threshold current; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1983.1071959
Filename
1071959
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