• DocumentCode
    1097391
  • Title

    Improvement of mask-limited yield with a vote-taking lithographic scheme

  • Author

    Fu, C.C. ; Dameron, D.H.

  • Author_Institution
    Stanford Electronics Laboratories, Stanford, CA
  • Volume
    5
  • Issue
    10
  • fYear
    1984
  • fDate
    10/1/1984 12:00:00 AM
  • Firstpage
    398
  • Lastpage
    400
  • Abstract
    A lithographic technique which can significantly reduce the effect of photomask defects is investigated. It is based on exposures of multiple reticle fields containing identical patterns, and is especially suitable for 1 × wafer steppers. The principle, requirements, and initial experimental results of this method are presented.
  • Keywords
    Contamination; Geometry; Inspection; Integrated circuit technology; Integrated circuit yield; Lithography; Printing; Raw materials; Resists; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25962
  • Filename
    1484338
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097391