A New Millimeter-Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay

Author

Crupi, Giovanni ; Schreurs, Dominique M M -P ; Raffo, Antonio ; Caddemi, Alina ; Vannini, Giorgio

Author_Institution

Univ. of Messina, Messina

Volume

56

Issue

4

fYear

2008

fDate

4/1/2008 12:00:00 AM

Firstpage

741

Lastpage

746

Abstract

A new technique is developed for determining analytically a millimeter-wave small-signal equivalent-circuit model of GaAs pseudomorphic HEMTs from scattering parameter measurements. In order to obtain a good agreement between model simulations and measurements up to 90 GHz, the conventional intrinsic output conductance is substituted by a voltage-controlled current source with a time delay. Consequently, a simple and accurate extraction procedure is proposed for taking into account the introduction of the output conductance time delay.

Keywords

active networks; electric admittance; electromagnetic wave scattering; equivalent circuits; high electron mobility transistors; integrated circuit modelling; millimetre wave transistors; semiconductor device models; GaAs; millimeter wave field effect transistor; millimeter-wave small-signal modeling; output conductance; pseudomorphic HEMT; scattering parameter measurement; semiconductor device modeling; small-signal equivalent circuit model; time delay; voltage-controlled current source; Millimeter-wave field-effect transistors (FETs); pseudomorphic HEMT (pHEMT); scattering parameters; semiconductor device modeling; small-signal equivalent circuits;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2008.918147

Filename

4469997