A precision measurement technique for residual polarization in integrated circuit capacitors

Accurate measurement of residual polarization (charge-voltage (Q-V)hysteresis) in integrated circuit capacitors has been obtained by a simple new technique. Resolution of 4 ppm has been achieved, far better than is possible with conventional CV measurements. Polysilicon (n+) to bulk (n+) capacitors with 500 Å of thermal silicon dioxide as the dielectric exhibit no residual polarization at this level.