• DocumentCode
    1097472
  • Title

    Spectral characteristics of gain-guided semiconductor lasers

  • Author

    Arnold, Gunther ; Petermann, Klaus ; Schlosser, Ewald

  • Author_Institution
    AEG-Telefunken, Forschungsinstitut Ulm, Ulm, Germany
  • Volume
    19
  • Issue
    6
  • fYear
    1983
  • fDate
    6/1/1983 12:00:00 AM
  • Firstpage
    974
  • Lastpage
    980
  • Abstract
    A relation for the spectral width of the envelope of lasing emission of gain-guided lasers is derived which contains only parameters that can be easily measured, such as near and far field, gain width, and facet reflectivity. For GaAlAs V -groove lasers, one typically obtains for the spectral width \\Delta \\lambda , in relation to the astigmatism factor K , a \\Delta \\lambda /K \\approx 1 ... 2 Å at 5 mW optical power, while GaInAsP V -groove lasers at 1.3 μm exhibit a \\Delta \\lambda /K \\approx 3 ... 5 Å.
  • Keywords
    Aluminum materials/devices; Gallium materials/lasers; Indium materials/devices; Equations; Gain measurement; Laser modes; Laser theory; Nonlinear optics; Optical refraction; Optical variables control; Semiconductor lasers; Stimulated emission; Vision defects;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1983.1071976
  • Filename
    1071976
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097472