Microwave Modulators Based on 4H-SiC p-i-n Diodes

Author

Zekentes, Konstantinos ; Camara, Nicolas ; Basanets, Volodymyr V. ; Boltovets, Mykola S. ; Kryvutsa, Valentyn A. ; Orechovskij, Volodymyr O. ; Simonchuk, Vasyl I. ; Zorenko, Alexander V. ; Bano, Edwige

Author_Institution

Inst. of Electron. Struct. & Laser (IESL), Heraklion

Volume

56

Issue

4

fYear

2008

fDate

4/1/2008 12:00:00 AM

Firstpage

803

Lastpage

808

Abstract

Multidiode broadband microwave signal modulators based on 4H-SiC p-i-n diodes were fabricated and fully characterized for the first time. The diodes used for the modulator fabrication exhibited a blocking voltage of 1100 V, a 100-mA differential resistance of 1-3 Omega, a punch-through voltage (100 V) capacitance below 0.5 pF, and a carrier effective lifetime of 15 ns. The three-diode modulators are characterized by a transmission loss of 1-2 dB and isolation of 27-34 dB in the 2-7-GHz frequency range, while their switching speed is as low as 30 ns. Two-diode modulators were specially designed for high-temperature operation. These modulators are characterized by a transmission loss of 1.1-2.6 dB and isolation of 33-44.5 dB in the 2-7-GHz frequency range at temperatures up to 300degC.

Keywords

microwave diodes; microwave switches; modulators; p-i-n diodes; silicon compounds; wide band gap semiconductors; SiC; current 100 mA; frequency 2 GHz to 7 GHz; insertion loss; isolation; loss 1 dB to 2.6 dB; microwave switches; multidiode broadband microwave signal modulators; p-i-n diodes; resistance 1 ohm to 3 ohm; voltage 1100 V; Insertion loss; isolation; microwave modulators; p-i-n diode; silicon carbide; switches;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2008.918168

Filename

4470002