• DocumentCode
    1097564
  • Title

    Theoretical investigation of n+-n-n+Ga0.47In0.53As TEO´s up to the millimeter-wave range

  • Author

    Friscourt, M.R. ; Rolland, P.A. ; Fauquembergue, R.

  • Author_Institution
    Université des Sciences et Techniques de Lille I, Villeneuve d´´Ascq Cedex, France
  • Volume
    5
  • Issue
    11
  • fYear
    1984
  • fDate
    11/1/1984 12:00:00 AM
  • Firstpage
    434
  • Lastpage
    436
  • Abstract
    Theoretical investigations of n+-n-n+Ga0.47In0.53As TED´s have been performed up to the millimeter-wave range. Accumulation layer transit time mode of oscillation has been pointed out up to about 50 GHz. n+-n-n+GaInAs devices exhibit higher output power and efficiency in the 30-GHz region than GaAs and InP similar devices, but their frequency behavior is poor because of their higher energy relaxation time.
  • Keywords
    Acoustic scattering; Anodes; Charge carrier density; Effective mass; Gallium arsenide; Indium phosphide; Millimeter wave technology; Optical scattering; Steady-state; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25978
  • Filename
    1484354
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097564