• DocumentCode
    1097628
  • Title

    A new thin-film humidity microsensor

  • Author

    Chen, S.N. ; Ramakrishnan, E.S. ; Huang, R.S. ; Grannemann, W.W.

  • Author_Institution
    The University of New Mexico, Albuquerque, NM
  • Volume
    5
  • Issue
    11
  • fYear
    1984
  • fDate
    11/1/1984 12:00:00 AM
  • Firstpage
    452
  • Lastpage
    453
  • Abstract
    A new humidity microsensor using barium titanate thin film in the metal-insulator-semiconductor (MIS) structure has been developed. These devices have capacitances sensitive to changes of relative humidity (RH), with a sensitivity of 300-percent change of capacitance corresponding to a humidity change from 27 to 90-percent RH at a testing frequency Of 1 MHz. The capacitance-voltage (CV) and current-voltage (I-V) characteristics for various relative humidities are presented. Temperature and frequency effects on sensor performance are also presented.
  • Keywords
    Barium; Capacitance; Frequency; Humidity; Metal-insulator structures; Microsensors; Temperature sensors; Testing; Titanium compounds; Transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25984
  • Filename
    1484360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097628