Title :
A new thin-film humidity microsensor
Author :
Chen, S.N. ; Ramakrishnan, E.S. ; Huang, R.S. ; Grannemann, W.W.
Author_Institution :
The University of New Mexico, Albuquerque, NM
fDate :
11/1/1984 12:00:00 AM
Abstract :
A new humidity microsensor using barium titanate thin film in the metal-insulator-semiconductor (MIS) structure has been developed. These devices have capacitances sensitive to changes of relative humidity (RH), with a sensitivity of 300-percent change of capacitance corresponding to a humidity change from 27 to 90-percent RH at a testing frequency Of 1 MHz. The capacitance-voltage (CV) and current-voltage (I-V) characteristics for various relative humidities are presented. Temperature and frequency effects on sensor performance are also presented.
Keywords :
Barium; Capacitance; Frequency; Humidity; Metal-insulator structures; Microsensors; Temperature sensors; Testing; Titanium compounds; Transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25984
