DocumentCode :
1097714
Title :
GaInAsP/InP surface emitting injection lasers with short cavity length
Author :
Soda, Haruhisa ; Motegi, Yoshihiro ; Iga, Kenichi
Author_Institution :
Fijitsu Lab., Ltd., Atsugi, Japan
Volume :
19
Issue :
6
fYear :
1983
fDate :
6/1/1983 12:00:00 AM
Firstpage :
1035
Lastpage :
1041
Abstract :
We have succeeded in making a surface emitting (SE) GaInAsP/InP injection laser with short cavity length (= 10 μm) which operates at 1.22 μm of wavelength with threshold current of 160 mA at 77 K. No side emitting mode was observed as a result of preparing long absorbing regions and a small dot electrode (20 μm φ). Only one longitudinal SE mode dominated up to 1.7 times the threshold and the far-field radiation angle was sharp ( 
). Fabrication processes and lasing condition are detailed.
). Fabrication processes and lasing condition are detailed.Keywords :
Gallium materials/lasers; Indium materials/devices; Laser resonators; Charge carrier density; Current density; Electrodes; Indium phosphide; Laser modes; Optical device fabrication; Optical surface waves; Surface emitting lasers; Surface waves; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1983.1072000
Filename :
1072000
Link To Document :
