Al/sub 0.25/In/sub 0.75/P/Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.35/In/sub /0/sub .65/As graded channel pseudomorphic HEMT´s with high channel-breakdown voltage

Author

Chough, K.B. ; Caneau, C. ; Hong, W.-P. ; Song, J.-I.

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

15

Issue

1

fYear

1994

Firstpage

33

Lastpage

35

Abstract

A new Al/sub 0.25/In/sub 0.75/P/Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.35/In/sub /0/sub .65/As pseudomorphic HEMT where the InAs mole fraction of the Ga₁spl minus/x/In/sub x/As channel was graded (x=0.53/spl rarr/0.65/spl rarr/0.53) is described. The modification of the quantum well channel significantly improved breakdown characteristics. In addition, use of an Al/sub 0.25/In/sub 0.75/P Schottky layer increased the Schottky barrier height. Devices having 0.5 μm gate-length showed g/sub m/ of 520 mS/mm and I_max of 700 mA/mm. The gate-drain (BV/sub g/spl minus/d/) and source-drain (BV/sub d/spl minus/s/) breakdown voltages were as high as /spl minus/14 and 13 V, respectively. An f_T of 70 GHz and f_max of 90 GHz were obtained.

Keywords

III-V semiconductors; Schottky effect; aluminium compounds; electric breakdown of solids; gallium arsenide; high electron mobility transistors; indium compounds; -14 V; 0.5 micron; 13 V; 520 mS/mm; 70 GHz; 90 GHz; Al/sub 0.25/In/sub 0.75/P-Al/sub 0.48/In/sub 0.52/As -Ga/sub 0.35/In/sub 0.65/As; AlInP Schottky layer; Ga/sub 1/spl minus/x/In/sub x/As channel; InAs mole fraction; barrier height; breakdown characteristics; graded channel; high channel-breakdown voltage; pseudomorphic HEMT; quantum well channel; submicron gate-length; Charge carrier density; Chemical vapor deposition; Etching; Fabrication; Gold; HEMTs; Hall effect; PHEMTs; Schottky barriers; Schottky diodes;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.289470

Filename

289470