Experimental high performance sub-0.1 μm channel nMOSFET´s

Author

Mii, Y. ; Rishton, S. ; Taur, Y. ; Kern, D. ; Lii, T. ; Lee, K. ; Jenkins, K.A. ; Quinlan, D. ; Brown, T., Jr. ; Danner, Daniel ; Sewell, F. ; Polcari, Marco

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

15

Issue

1

fYear

1994

Firstpage

28

Lastpage

30

Abstract

Very high performance sub-0.1 μm channel nMOSFET´s are fabricated with 35 /spl Aring/ gate oxide and shallow source-drain extensions. An 8.8-ps/stage delay at V_DD=1.5 V is recorded from a 0.08 μm channel nMOS ring oscillator at 85 K. The room temperature delay is 11.3 ps/stage. These are the fastest switching speeds reported to date for any silicon devices at these temperatures. Cutoff frequencies (f_T) of a 0.08 μm channel device are 93 GHz at 300 K, and 119 GHz at 85 K, respectively. Record saturation transconductances, 740 mS/mm at 300 K and 1040 mS/mm at 85 K, are obtained from a 0.05 μm channel device. Good subthreshold characteristics are achieved for 0.09 μm channel devices with a source-drain halo process.

Keywords

MOS integrated circuits; VLSI; elemental semiconductors; insulated gate field effect transistors; silicon; 0.05 to 0.1 micron; 35 A; 740 to 1040 mS/mm; 8.8 to 11.3 ps; 85 to 300 K; 93 to 119 GHz; NMOS device; Si; nMOSFETs; saturation transconductances; shallow source-drain extensions; silicon device; source-drain halo process; sub-0.1 /spl mu/m channel; subthreshold characteristics; Circuit testing; Cutoff frequency; Delay; Doping profiles; Etching; Implants; MOS devices; MOSFET circuits; Ring oscillators; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.289472

Filename

289472