A 0.5-μm-gate GaAs/AlGaAs inverted HEMT IC-multiplier and D/A converter

Author

Nishi, Seiji ; Seki, Shouhei ; Saito, Tadashi ; Fujishiro, Hiroki Inomata ; San, Yoshiaki

Author_Institution

Oki Electr. Ind. Co. Ltd., Tokyo, Japan

Volume

36

Issue

10

fYear

1989

fDate

10/1/1989 12:00:00 AM

Firstpage

2191

Lastpage

2195

Abstract

A gate recess process for a 0.5-μm I-HEMT (inverted high electron mobility transistor) has been developed. A drain conductance for the 0.5-μm I-HEMT as small as 2 mS/mm was achieved, indicating a small short-channel effect. The threshold voltage uniformities were studied in microscopic and macroscopic areas in a 2-in wafer. The uniformities are very high, i.e. the standard deviations of microscopic and macroscopic areas are 10 and 30 mV, respectively, at a threshold voltage of 0.1 V. An 8×4 parallel multiplier was fabricated, and a multiplication time of 1.67 ns was obtained at room temperature. An 8-b digital/analog converter (DAC) was fabricated and operated at a clock rate of 1.2 GHz. The DC linearity of the DAC is better than 0.18 LSB. These results confirm that an I-HEMT is very well suited for high-speed integrated circuits

Keywords

III-V semiconductors; aluminium compounds; digital integrated circuits; digital-analogue conversion; field effect integrated circuits; gallium arsenide; multiplying circuits; 0.5 micron; 1.67 ns; 2 mS; 8 bit; D/A converter; DC linearity; GaAs-AlGaAs; clock rate; drain conductance; gate recess process; high-speed integrated circuits; inverted HEMT IC-multiplier; multiplication time; parallel multiplier; room temperature; short-channel effect; threshold voltage uniformities; Analog-digital conversion; Clocks; Gallium arsenide; HEMTs; High speed integrated circuits; Linearity; MODFETs; Microscopy; Temperature; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40899

Filename

40899