Title :
Heterojunction discontinuites: The current position
Author_Institution :
University of Minnesota, Minneapolis, MN
fDate :
11/1/1984 12:00:00 AM
Abstract :
This is the fourth in a series of letters describing the controversy about heterojunction band structure and presenting the arguments for and against the published models. The present letter describes an analytic proof for the continuous intrinsic level hypothesis and summarizes the latest experimental evidence in its favor.
Keywords :
Charge carrier processes; Gallium arsenide; Germanium; Heterojunctions; Microelectronics; Poisson equations; Semiconductor impurities; Silicon; Statistics; Time series analysis;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.26002