DocumentCode :
1097833
Title :
Heterojunction discontinuites: The current position
Author :
Nussbaum, A.
Author_Institution :
University of Minnesota, Minneapolis, MN
Volume :
5
Issue :
11
fYear :
1984
fDate :
11/1/1984 12:00:00 AM
Firstpage :
499
Lastpage :
501
Abstract :
This is the fourth in a series of letters describing the controversy about heterojunction band structure and presenting the arguments for and against the published models. The present letter describes an analytic proof for the continuous intrinsic level hypothesis and summarizes the latest experimental evidence in its favor.
Keywords :
Charge carrier processes; Gallium arsenide; Germanium; Heterojunctions; Microelectronics; Poisson equations; Semiconductor impurities; Silicon; Statistics; Time series analysis;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1984.26002
Filename :
1484378
Link To Document :
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