Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors

Author

Bolognesi, C.R. ; Caine, E.J. ; Kroemer, H.

Author_Institution

Semiconductor Components Group, Northern Telecom, Ottawa, Ont., Canada

Volume

15

Issue

1

fYear

1994

Firstpage

16

Lastpage

18

Abstract

We demonstrate high-speed InAs/AlSb-based heterostructure field-effect transistors (HFET´s) displaying greatly improved charge control properties and enhanced high-frequency gate performance. Microwave devices with a 0.5×84 μm² exhibit a peak unity current gain cut-off frequency of f_T=93 GHz. The HFET usable operational range was extended to V/sub DS/=1.5 V (from V/sub DS/=0.4-0.5 V) thus greatly enhancing the applicability of InAs/AlSb-based HFET´s for low-power, high-frequency amplification. We also report on the bias dependence of f_T, and demonstrate that InAs/AlSb-based HFET´s offer an attractive frequency performance over an adequately wide range of drain biases.

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; indium compounds; microwave amplifiers; solid-state microwave devices; 0.5 mum; 1.5 V; 93 GHz; HFET; InAs-AlSb; InAs/AlSb-based heterostructure field-effect transistors; bias dependence; charge control; cutoff frequency; drain characteristics; frequency performance; high-speed transistors; low-power high-frequency amplification; microwave devices; operational range; peak unity current gain cut-off frequency; Aluminum; Buffer layers; Cutoff frequency; Electrons; FETs; HEMTs; MODFETs; Microwave devices; Microwave generation; Transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.289476

Filename

289476