DocumentCode :
1097853
Title :
Investigations on Photon Energy Response of RadFET Using Monte Carlo Simulations
Author :
Beck, Peter ; Bock, Florian ; Böck, Helmuth ; Latocha, Marcin ; Price, Robert A. ; Rollet, Sofia ; Wind, Michael
Author_Institution :
ARC Seibersdorf Res., Seibersdorf, Austria
Volume :
54
Issue :
4
fYear :
2007
Firstpage :
1151
Lastpage :
1157
Abstract :
We describe investigations of RadFET energy response simulated with Geant4 and FLUKA2005 Monte Carlo codes. An analysis of energy deposition is carried out for photon irradiation with energies between 35 keV and 2 MeV. The absorbed dose in the silicon dioxide layer (few hundred nanometers) is compared for both transport codes.
Keywords :
Monte Carlo methods; field effect transistors; radiation effects; FLUKA2005; Geant4; Monte Carlo simulations; RadFET; energy deposition; photon energy response; photon irradiation; silicon dioxide layer; Computational modeling; Dosimetry; Educational institutions; Geometry; Ionizing radiation; Monte Carlo methods; Radiation detectors; Silicon compounds; Solid modeling; Testing; Basic mechanism; RadFET; dosimetry; energy deposition; radiation detectors; radiation transport; simulation;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2007.902350
Filename :
4291686
Link To Document :
بازگشت