DocumentCode :
1097860
Title :
Radiation Response of Emerging High Gain, Low Noise Detectors
Author :
Becker, Heidi N. ; Farr, William H. ; Zhu, David Q.
Author_Institution :
California Inst. of Technol., Pasadena
Volume :
54
Issue :
4
fYear :
2007
Firstpage :
1129
Lastpage :
1135
Abstract :
Data illustrating the radiation response of emerging high gain, low noise detectors are presented. Ionizing dose testing of silicon internal discrete avalanche photodiodes, and 51-MeV proton testing of InGaAs/InAlAs avalanche photodiodes operated in Geiger mode are discussed.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; dosimetry; elemental semiconductors; gallium arsenide; indium compounds; photon counting; semiconductor device noise; silicon; silicon radiation detectors; Geiger mode; InGaAs-InAlAs - Interface; Si - Interface; high gain detectors; ionizing dose testing; low noise detectors; proton testing; radiation experiments; silicon internal discrete avalanche photodiodes; Avalanche photodiodes; Electrodes; Indium gallium arsenide; Optical fiber communication; Optical receivers; Radiation detectors; Semiconductor device noise; Silicon; Space technology; Testing; Avalanche photodiode; excess noise factor; internal discrete avalanche photodiode; photon counting;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2007.894179
Filename :
4291687
Link To Document :
بازگشت