• DocumentCode
    1097895
  • Title

    A simple method to characterize substrate current in MOSFET´s

  • Author

    Chan, T.Y. ; Ko, P.K. ; Hu, C.

  • Author_Institution
    University of California at Berkeley, Berkeley, CA
  • Volume
    5
  • Issue
    12
  • fYear
    1984
  • fDate
    12/1/1984 12:00:00 AM
  • Firstpage
    505
  • Lastpage
    507
  • Abstract
    Experimental verification of substrate current characteristics is thoroughly carried out. VDS- VDSAT, instead of VDS, is shown to be the driving force of all hot-electron effects. A simple relationship between substrate current and VDS- VDSATis found. This relationship provides a convenient tool to characterize the substrate current or the channel electric field, and, hence, all hot-electron effects. Measurements of ISUB/IDand VDS- VDSATat two bias points and any one channel length are sufficient to fully characterize the substrate currents for all channel lengths VDS´s and VG´s for a given technology.
  • Keywords
    Charge carrier processes; Computerized monitoring; Current measurement; Electric breakdown; Impact ionization; Length measurement; MOSFET circuits; Predictive models; Region 2; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.26006
  • Filename
    1484382
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097895