Title :
A simple method to characterize substrate current in MOSFET´s
Author :
Chan, T.Y. ; Ko, P.K. ; Hu, C.
Author_Institution :
University of California at Berkeley, Berkeley, CA
fDate :
12/1/1984 12:00:00 AM
Abstract :
Experimental verification of substrate current characteristics is thoroughly carried out. VDS- VDSAT, instead of VDS, is shown to be the driving force of all hot-electron effects. A simple relationship between substrate current and VDS- VDSATis found. This relationship provides a convenient tool to characterize the substrate current or the channel electric field, and, hence, all hot-electron effects. Measurements of ISUB/IDand VDS- VDSATat two bias points and any one channel length are sufficient to fully characterize the substrate currents for all channel lengths VDS´s and VG´s for a given technology.
Keywords :
Charge carrier processes; Computerized monitoring; Current measurement; Electric breakdown; Impact ionization; Length measurement; MOSFET circuits; Predictive models; Region 2; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.26006
