DocumentCode :
1097917
Title :
Total Ionizing Dose Effects in NOR and NAND Flash Memories
Author :
Cellere, Giorgio ; Paccagnella, Alessandro ; Visconti, Angelo ; Bonanomi, Mauro ; Beltrami, S. ; Schwank, Jim R. ; Shaneyfelt, Marty R. ; Paillet, Philippe
Author_Institution :
Padova Univ., Padova
Volume :
54
Issue :
4
fYear :
2007
Firstpage :
1066
Lastpage :
1070
Abstract :
We irradiated floating gate (FG) memories with nor and nand architecture by using different TID sources, including 2 MeV, 98 MeV, and 105 MeV protons, X-rays, and Upsi-rays. Two classes of phenomena are responsible for charge loss from programmed FGs: the first is charge generation, recombination, and transport in the dielectrics, while the second is the emission of electrons above the oxide band. Charge loss from programmed FGs irradiated with protons of different energy closely tracks results from Upsi-rays, whereas the use of X-rays results in dose enhancement effects.
Keywords :
electron emission; flash memories; NAND flash memories; NOR flash memories; charge loss; electron emission; total ionizing dose effects; Degradation; Dielectric losses; Dielectric substrates; Ionizing radiation; Laboratories; MOSFET circuits; Microelectronics; Nonvolatile memory; Protons; X-rays; Floating gate memories; proton irradiation; total ionizing dose;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2007.901199
Filename :
4291693
Link To Document :
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