DocumentCode
1097953
Title
Electric Field Properties of CdTe Nuclear Detectors
Author
Cola, A. ; Farella, I. ; Mancini, A.M. ; Donati, A.
Author_Institution
IMM-CNR, Lecce
Volume
54
Issue
4
fYear
2007
Firstpage
868
Lastpage
872
Abstract
Recently, diode-like In/CdTe/Pt detectors have been realized which look very promising thanks to their enhanced spectroscopic performance. Scope of this work is to investigate the electric field distribution inside these detectors and its temporal evolution by means of the Pockels effect. The implemented set-up allows us to map the electric field and thus to extract the field profiles between the contacts. The analysis shows that the field is mainly confined below the anode. After applying the bias, these detectors are not very stable at room temperature, and they present a pronounced degradation in spectroscopic performance. This degradation is correlated in this work to the evolution of the electric field which has been observed to dasiamovepsila towards the anode. We attribute this dasiapolarizationpsila behavior in CdTe detectors to the concomitance of two factors: the presence of deep levels in the bulk material, and the high hole barrier height of In on CdTe.
Keywords
Pockels effect; Schottky barriers; X-ray detection; anodes; deep levels; electric field effects; polarisation; semiconductor counters; CdTe nuclear detectors; Pockels effect; Schottky barriers; X-ray detectors; anode; deep levels; diode-like In/CdTe/Pt detectors; electric field distribution; hole barrier height; polarization; Anodes; Contacts; Degradation; Polarization; Schottky diodes; Semiconductor diodes; Spectroscopy; Temperature; Voltage; X-ray detectors; CdTe; Pockels effect; Schottky barriers; X-ray detectors; diode-like detectors; polarization;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2007.896218
Filename
4291697
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