DocumentCode
1097987
Title
Monolithic integration of a metal—semiconductor—metal photodiode and a GaAs preamplifier
Author
Ito, M. ; Wada, O. ; Nakai, K. ; Sakurai, T.
Author_Institution
Fujitsu Laboratories, Ltd., Atsugi, Kanagawa, Japan
Volume
5
Issue
12
fYear
1984
fDate
12/1/1984 12:00:00 AM
Firstpage
531
Lastpage
532
Abstract
A metal-semiconductor-metal (MSM) photodiode and a preamplifier have been monolithically integrated on a GaAs substrate by a very simple fabrication process. Measurements have shown that the constituent MSM photodiode has a sensitivity of 2.2 A/W and a -3-dB cutoff frequency of as high as 1 GHz. The present photodiode has been found to realize an extremely high photosensitivity of the monolithically integrated circuit, 26 mV/µW.
Keywords
Buffer layers; Electrodes; FETs; Fabrication; Gallium arsenide; Monolithic integrated circuits; P-i-n diodes; Photodiodes; Preamplifiers; Schottky diodes;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1984.26014
Filename
1484390
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