DocumentCode :
1098012
Title :
A novel heterojunction bipolar transistor active feedback design
Author :
Kobayashi, K.W. ; Oki, A.K. ; Tran, L.T. ; Velebir, J.R. ; Streit, D.C.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Volume :
4
Issue :
5
fYear :
1994
fDate :
5/1/1994 12:00:00 AM
Firstpage :
146
Lastpage :
148
Abstract :
This paper reports on the results of a novel active feedback amplifier design using heterojunction bipolar transistors. The design incorporates positive feedback to increase the gain bandwidth response by as much as 50 %. The active feedback amplifier achieves a gain of 13.8 dB and a 3-dB bandwidth of 15.6 GHz. The active feedback is economical in size in comparison to a spiral inductor implementation. In addition, the active feedback network includes a means for electronically tuning the active feedback circuit in order to adjust the bandwidth response. A two-stage design achieves a tuneable bandwidth from 4-10 GHz with a fixed gain of 20 dB. The tuneability that this design offers is a convenient means for recovering from gain and bandwidth degradation due to process variation and fixture parasitics.<>
Keywords :
MMIC; bipolar integrated circuits; feedback; heterojunction bipolar transistors; microwave amplifiers; tuning; wideband amplifiers; 13.8 dB; 15.6 GHz; 4 to 10 GHz; HBT amplifier; InAlAs-InGaAs; MMIC; SHF; active feedback design; electronic tuning; feedback amplifier design; gain bandwidth response; heterojunction bipolar transistor; positive feedback; tunable bandwidth; two-stage design; Active inductors; Bandwidth; Circuit optimization; Degradation; Feedback amplifiers; Feedback circuits; Gain; Heterojunction bipolar transistors; Spirals; Tunable circuits and devices;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.289514
Filename :
289514
Link To Document :
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