Title :
Outperforming the Conventional Scaling Rules in the Quantum-Capacitance Limit
Author :
Knoch, J. ; Riess, W. ; Appenzeller, J.
Author_Institution :
IBM Res. GmbH, Ruschlikon
fDate :
4/1/2008 12:00:00 AM
Abstract :
We present a study on the scaling behavior of field- effect transistors in the quantum-capacitance limit (QCL). It will be shown that a significant performance improvement in terms of the power delay product can be obtained in devices scaled toward the QCL. As a result, nanowires or nanotubes exhibiting a 1-D transport are a premier choice as active channel materials for transistor devices since the QCL can be attained in such systems.
Keywords :
field effect transistors; nanotubes; nanowires; 1D transport; active channel materials; conventional scaling rules; field-effect transistors; nanotubes; nanowires; power delay product; quantum-capacitance limit; scaling behavior; transistor devices; Gate delay; MOSFET; nanowire/tube; one-dimensional (1-D); quantum capacitance; scaling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.917816
