Title :
A 100-GHz monolithic cascode InAlAs/InGaAs HEMT oscillator
Author :
Kwon, Youngwoo ; Pavlidis, Dimitris ; Marsh, Phil ; Brock, Tim ; Streit, Dwight C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
5/1/1994 12:00:00 AM
Abstract :
The design, fabrication, and experimental characteristics of a 100-GHz monolithic cascode HEMT oscillator are presented. A cascode pair of InAlAs/InGaAs HEMT´s has been used as the active cell to enhance the negative resistance so that more process tolerance can be achieved. The monolithic circuit oscillates around 100 GHz with an output power of 2 dBm at a drain bias voltage as small as 0.9 V. This is the first demonstration of cascode HEMT oscillators at W-band.<>
Keywords :
III-V semiconductors; MMIC; active networks; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave oscillators; negative resistance; 100 GHz; EHF; InAlAs-InGaAs; MIMIC; MM-wave IC; W-band; cascode HEMT oscillators; cascode HEMT pair; fabrication; monolithic circuit; negative resistance; Character recognition; Circuit synthesis; Circuit testing; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Negative feedback; Power generation; Voltage-controlled oscillators;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
