Title :
A New Method to Determine Effective Lateral Doping Abruptness and Spreading-Resistance Components in Nanoscale MOSFETs
Author :
Kim, Seong-Dong ; Narasimha, Shreesh ; Rim, Ken
Author_Institution :
IBM Semicond. Res. & Dev. Center, Hopewell Junction
fDate :
4/1/2008 12:00:00 AM
Abstract :
A comprehensive technique for the accurate extraction of the effective lateral doping abruptness and the spreading-resistance components in source/drain extension (EXT) regions is presented by FET on-resistance characterization and physical resistance modeling. The spreading-resistance components under EXT-to-gate overlap, and spacer regions are successfully correlated to the lateral EXT doping abruptness by the relationship between on-resistance and overlap capacitance response measured from 90-nm-node silicon-on-insulator MOSFETs. The accurate determination of lateral doping abruptness is found to be essential for linking the external spreading resistance to intrinsic short-channel device characteristics.
Keywords :
MOSFET; capacitance; electric resistance; nanoelectronics; semiconductor device measurement; semiconductor device models; semiconductor doping; silicon-on-insulator; EXT-to-gate overlap; intrinsic short-channel device characteristics; lateral doping abruptness; nanoscale MOSFET; overlap capacitance response; physical resistance modeling; silicon-on-insulator; size 90 nm; source/drain extension region; spreading-resistance component; CMOS technology; Capacitance measurement; Contact resistance; Data mining; Doping profiles; Electrical resistance measurement; FETs; MOSFETs; Semiconductor process modeling; Silicon on insulator technology; Lateral doping abruptness; MOSFETs; on-resistance; overlap capacitance; series resistance; spreading resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.917548
