Title :
Electrical characterization of megabit DRAMs. 11. Internal testing
Author :
KÕLZER, JOCHEN ; Otto, Johann
Author_Institution :
Siemens AG, Munich, Germany
fDate :
12/1/1991 12:00:00 AM
Abstract :
For pt.I. see ibid., vol.8, no.3, p.36-43 (1991). Contactless tools for testing inside dynamic RAMs, including hot-spot detection, emission microscopy, scanning laser microscopy, and submicron electron beam testing, are described. Basic principles and experimental setups are described. The utility of the techniques is assessed
Keywords :
DRAM chips; VLSI; failure analysis; infrared imaging; integrated circuit testing; optical microscopy; 4 Mbit; 4 megabit; DRAMs internal testing; contactless tools; emission microscopy; hot-spot detection; scanning laser microscopy; submicron electron beam testing; Circuit faults; Integrated circuit testing; Liquid crystals; Optical microscopy; Optical polarization; Optical refraction; Power engineering and energy; Process design; Random access memory; Temperature;
Journal_Title :
Design & Test of Computers, IEEE
