Title :
Comparison of two recent semiconductor laser models
Author_Institution :
Plessey Res. Caswell Ltd., Towcester, UK
fDate :
9/1/1983 12:00:00 AM
Abstract :
Two rather similar models for the dynamic behavior of semiconductor lasers, including spatial variations in the carrier density and the intensity, are compared. Both models are applied to a specific example and very different results are found. The reason for the discrepancy is that different numerical methods are used to solve the field equation. The validity of the methods is discussed.
Keywords :
Semiconductor lasers; Algorithms; Charge carrier density; DH-HEMTs; Electron beams; Indium phosphide; Laser beams; Laser modes; Nonlinear equations; Semiconductor lasers; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1983.1072041
