Title :
Growth of Thick Films CdTe From the Vapor Phase
Author :
Greiffenberg, D. ; Sorgenfrei, R. ; Bachem, K.H. ; Fiederle, M.
Author_Institution :
Albert-Ludwigs-Univ. Freiburg, Freiburg
Abstract :
100 thick films of CdTe were grown on semi-insulating (100) GaAs substrates by physical vapor transport (PVT) in a modified molecular beam epitaxy facility. The grown layers were highly oriented as revealed from X-ray pole figure measurements. Temperature- and intensity-dependent photoluminescence measurements were taken before and after the chemical removal of the substrate to determine the effect of the GaAs substrate and to estimate the crystallographic quality of the layers. Current-voltage characteristics were performed to obtain the resistitivity of the layers with .
Keywords :
II-VI semiconductors; cadmium compounds; electrical resistivity; molecular beam epitaxial growth; photoluminescence; semiconductor counters; CdTe-GaAs - Interface; GaAs - Surface; X-ray pole figure measurement; chemical removal; crystallographic quality; current-voltage characteristics; detector grade thick films; intensity-dependent photo-luminescence; molecular beam epitaxy facility; physical vapor transport; resistitivity; semiinsulating substrates; temperature-dependent photoluminescence measurement; thick film growth; Chemicals; Gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Substrates; Temperature; Thick films; X-ray detection; X-ray detectors; X-ray diffraction; CdTe; MBE; photoluminescence; radiation detector; thick films; x-ray diffraction;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.902353
