DocumentCode
109827
Title
A 474 GHz HBV Frequency Quintupler Integrated on a 20 
Thick Silicon Substrate
Author
Malko, Aleksandra ; Bryllert, Tomas ; Vukusic, Josip ; Stake, Jan
Author_Institution
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
Volume
5
Issue
1
fYear
2015
fDate
Jan. 2015
Firstpage
85
Lastpage
91
Abstract
We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler ( ×5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 μm) of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of output power at 474 GHz, when pumped with 400 mW at 94.75 GHz, corresponding to conversion efficiency of 0.75%. The present device exhibits a 3-dB bandwidth of 4%.
Keywords
III-V semiconductors; elemental semiconductors; frequency multipliers; indium compounds; monolithic integrated circuits; semiconductor heterojunctions; silicon; silicon-on-insulator; submillimetre wave devices; varactors; HBV; InP-Si; SOI; Si; conversion efficiency; epitaxial transfer; frequency 440 GHz to 490 GHz; frequency 94.75 GHz; frequency quintupler chip; output power; power 400 mW; silicon integrated heterostructure barrier varactor frequency quintupler; silicon-on-insulator; size 20 mum; thick silicon substrate; Conductivity; Power generation; Semiconductor diodes; Silicon; Substrates; Temperature measurement; Compound semiconductors; THz sources; epitaxial transfer; frequency multipliers; heterostructure barrier varactors; monolithic integrated circuits; sub-microwave diodes; submillimetre wave; wafer bonding;
fLanguage
English
Journal_Title
Terahertz Science and Technology, IEEE Transactions on
Publisher
ieee
ISSN
2156-342X
Type
jour
DOI
10.1109/TTHZ.2014.2378793
Filename
6998071
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