DocumentCode
1098332
Title
A new vertical power MOSFET structure with extremely reduced on-resistance
Author
Ueda, Daisuke ; Takagi, Hiromitsu ; Kano, Gota
Author_Institution
Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
Volume
32
Issue
1
fYear
1985
fDate
1/1/1985 12:00:00 AM
Firstpage
2
Lastpage
6
Abstract
A new vertical power MOSFET structure called rectangular-grooved MOSFET (RMOS) is proposed, in which the vertical channels are provided along the sidewalls of the rectangular grooves formed by a reactive ion-beam etching (RIBE) technique. The structure is characterized by reduced ON-resistance and high packing density. The relationship between the ON-resistance and the packing density in the new structure is calculated. It is demonstrated that the structure essentially possesses a lower ON-resistance per unit area than VMOS and DMOS structures. Experimental results are also described in detail.
Keywords
Automatic logic units; Bipolar transistors; Circuit stability; Electron mobility; Etching; Impedance; MOSFET circuits; Power MOSFET; Region 6; Thermal stability;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.21900
Filename
1484647
Link To Document