Title :
A new vertical power MOSFET structure with extremely reduced on-resistance
Author :
Ueda, Daisuke ; Takagi, Hiromitsu ; Kano, Gota
Author_Institution :
Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
fDate :
1/1/1985 12:00:00 AM
Abstract :
A new vertical power MOSFET structure called rectangular-grooved MOSFET (RMOS) is proposed, in which the vertical channels are provided along the sidewalls of the rectangular grooves formed by a reactive ion-beam etching (RIBE) technique. The structure is characterized by reduced ON-resistance and high packing density. The relationship between the ON-resistance and the packing density in the new structure is calculated. It is demonstrated that the structure essentially possesses a lower ON-resistance per unit area than VMOS and DMOS structures. Experimental results are also described in detail.
Keywords :
Automatic logic units; Bipolar transistors; Circuit stability; Electron mobility; Etching; Impedance; MOSFET circuits; Power MOSFET; Region 6; Thermal stability;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.21900
