Title :
Multiple-Bit Upset Analysis in 90 nm SRAMs: Heavy Ions Testing and 3D Simulations
Author :
Giot, Damien ; Roche, Philippe ; Gasiot, Gilles ; Harboe-Sorensen, Reno
Author_Institution :
Central CAD & Design Solutions Group, Crolles
Abstract :
SEU and MBU cross-sections are measured with heavy ions for commercial 90 nm single port and dual port SRAMs. SEU and MBU rates are discussed as a function of the LET and beam tilt. A new sensitive area devoted to MBU is computed with full 3D TCAD simulations on single and adjacent memory cells.
Keywords :
CMOS memory circuits; SRAM chips; ion beam effects; technology CAD (electronics); 3D TCAD simulations; dual port SRAM; heavy ions testing; memory cells; multiple-bit upset analysis; single event upset; single port SRAM; size 90 nm; Analytical models; Circuit simulation; Circuit testing; Computational modeling; Design automation; MOSFETs; Neutrons; Semiconductor device measurement; Single event upset; Space technology; Charge sharing; MOS transistor; critical charge; heavy ions; multiple-bit upset; sensitive area; silicon; single-event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.902360
