Title :
Radiation Damage in Power MOSFET Optocouplers
Author :
Johnston, Allan H. ; Miyahira, Tetsuo F.
Author_Institution :
California Inst. of Technol., Pasadena
Abstract :
Radiation damage is investigated in optocouplers with power MOSFET output stages. They differ from conventional optocouplers, incorporating an intermediate photovoltaic chip to allow the MOSFET gate voltage to be controlled by the light-emitting diode. These optocouplers are sensitive to ionization as well as displacement damage, and can fail catastrophically from degradation in either the power MOSFET or the LED. Radiation testing must take both mechanisms into account.
Keywords :
ionisation; light emitting diodes; optical couplers; power MOSFET; proton effects; LED; gate voltage; intermediate photovoltaic chip; ionization; light-emitting diode; power MOSFET optocouplers; proton radiation damage; Degradation; Ionization; Light emitting diodes; Lighting control; MOSFET circuits; Photovoltaic systems; Power MOSFET; Solar power generation; Testing; Voltage control; MOSFET; optocoupler; proton damage; space radiation effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.903172
