• DocumentCode
    1098389
  • Title

    Quantum-well perfection requirements for large-scale applications of exciton-base devices

  • Author

    Singh, Jasprit

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    30
  • Issue
    4
  • fYear
    1994
  • fDate
    4/1/1994 12:00:00 AM
  • Firstpage
    893
  • Lastpage
    898
  • Abstract
    Exciton-based devices have been shown to display remarkable properties that can find applications in optical information processing. However, if these devices are to be used in systems where many devices and chips involving the excitonic effect are to be used, there has to be stringent control over the quantum-well perfection. In this paper we examine the effect of exciton linewidth and well size fluctuations on a number of device-related effects based on the quantum-confined Stark effect. We find that for many applications a one-monolayer variation in structures fabricated in different runs will drastically diminish the system performance
  • Keywords
    III-V semiconductors; Stark effect; aluminium compounds; excitons; gallium arsenide; optical information processing; semiconductor quantum wells; GaAs-Al0.3Ga0.7As; GaAs/Al0.3Ga0.7As quantum well structure; chips; device-related effects; exciton linewidth; exciton-base devices; excitonic effect; large-scale applications; one-monolayer variation; optical information processing; quantum-confined Stark effect; quantum-well perfection requirements; structures; system performance; well size fluctuations; Control systems; Displays; Excitons; Fluctuations; Information processing; Large-scale systems; Optical devices; Quantum well devices; Quantum wells; Stark effect;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.291358
  • Filename
    291358