DocumentCode :
1098407
Title :
Nanodiamond Lateral VFEM Technology for Harsh Environments
Author :
Kang, W.P. ; Davidson, J.L. ; Subramanian, K. ; Choi, B.K. ; Galloway, K.F.
Author_Institution :
Vanderbilt Univ., Nashville
Volume :
54
Issue :
4
fYear :
2007
Firstpage :
1061
Lastpage :
1065
Abstract :
This paper reports the first total dose tests on a nanocrystalline diamond lateral vacuum field emission microelectronics (VFEM) technology. This technology operates efficiently at both low and high temperatures (200degC) and is inherently ldquohardrdquo to radiation. No measurable change in device response is observed after 15 Mrad(SiO2) total dose exposure, signifying an emerging electronics for extreme environment.
Keywords :
diamond; elemental semiconductors; field emission; integrated circuits; nanostructured materials; device response; nanocrystalline diamond; nanodiamond lateral vacuum field emission microelectronics; radiation absorbed dose 15 Mrad; radiation hardness; silicon-on-insulator substrate; total dose tests; Electron sources; Fabrication; Microelectronics; Nanoscale devices; Paper technology; Solid state circuits; Temperature; Testing; Vacuum systems; Vacuum technology; High temperature; lateral device; nanodiamond; total dose; vacuum field emission microelectronics (VFEM);
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2007.892117
Filename :
4291740
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1098407
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